Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(100)

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

9 Scopus Citations
View graph of relations

Author(s)

  • F. Wu
  • S.S. Rao
  • J.T. Prater
  • Y.T. Zhu
  • J. Narayan

Detail(s)

Original languageEnglish
Pages (from-to)263-268
Journal / PublicationCurrent Opinion in Solid State and Materials Science
Volume18
Issue number5
Online published27 Sept 2014
Publication statusPublished - Oct 2014
Externally publishedYes

Abstract

Epitaxial Ni thin films are integrated with tunneling barrier MgO on Si(100) substrate. During pulsed laser deposition, early island-like structure transformed into uniform thin film with increasing number of laser pulses. This led to transitions in exchange bias from positive to negative and back to positive, which is ascribed to morphology associated residual strain. The Ni island structure has a coercive field as high as 3 times of that of the continuous film. The current work holds a tremendous promise in the realization of magnetic devices integrated with the Si-platform.

Research Area(s)

  • Domain matching epitaxy, Epitaxial Ni thin films, Exchange bias, Pulsed laser deposition

Citation Format(s)

Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(100). / Wu, F.; Rao, S.S.; Prater, J.T. et al.
In: Current Opinion in Solid State and Materials Science, Vol. 18, No. 5, 10.2014, p. 263-268.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review