Tungsten-platinum alloy Schottky barriers on n-type GaAs
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 42-44 |
Journal / Publication | Applied Physics Letters |
Volume | 47 |
Issue number | 1 |
Publication status | Published - 1985 |
Externally published | Yes |
Link(s)
Abstract
Alloys of tungsten and platinum were studied as a Schottky contact material on n-type GaAs. Schottky barrier heights for two alloy compositions, W 50Pt50 and W8 0Pt20, were measured by current-voltage, capacitance-voltage, and photoresponse techniques of the barrier heights. The values of the barrier heights from the latter two techniques were 0.90±0.02 eV and did not change with annealing at 350°C for 20 h. However, the value from the I-V technique changed from about 0.6 to 0.7 eV upon annealing. The W50Pt50 alloy was found to be more stable than the W80Pt2 0 alloy on GaAs.
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Citation Format(s)
Tungsten-platinum alloy Schottky barriers on n-type GaAs. / Okumura, T.; Tu, K. N.
In: Applied Physics Letters, Vol. 47, No. 1, 1985, p. 42-44.
In: Applied Physics Letters, Vol. 47, No. 1, 1985, p. 42-44.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review