Tungsten-platinum alloy Schottky barriers on n-type GaAs

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)42-44
Journal / PublicationApplied Physics Letters
Volume47
Issue number1
Publication statusPublished - 1985
Externally publishedYes

Abstract

Alloys of tungsten and platinum were studied as a Schottky contact material on n-type GaAs. Schottky barrier heights for two alloy compositions, W 50Pt50 and W8 0Pt20, were measured by current-voltage, capacitance-voltage, and photoresponse techniques of the barrier heights. The values of the barrier heights from the latter two techniques were 0.90±0.02 eV and did not change with annealing at 350°C for 20 h. However, the value from the I-V technique changed from about 0.6 to 0.7 eV upon annealing. The W50Pt50 alloy was found to be more stable than the W80Pt2 0 alloy on GaAs.

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Citation Format(s)

Tungsten-platinum alloy Schottky barriers on n-type GaAs. / Okumura, T.; Tu, K. N.
In: Applied Physics Letters, Vol. 47, No. 1, 1985, p. 42-44.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review