Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han; Fengyun Wang; Jared J. Hou; Sen Po Yip; Hao Lin; Fei Xiu; Ming Fang; Zaixing Yang; Xiaoling Shi; Guofa Dong; Tak Fu Hung; Johnny C. Ho

doi:10.1002/adma.201301362

Author(s)

Ning Han
Fengyun Wang
Jared J. Hou
Hao Lin
Fei Xiu
Ming Fang
Zaixing Yang
Xiaoling Shi
Guofa Dong
Tak Fu Hung

Related Research Unit(s)

Detail(s)

Original language	English
Pages (from-to)	4445-4451
Journal / Publication	Advanced Materials
Volume	25
Issue number	32
Publication status	Published - 27 Aug 2013

Link(s)

DOI	DOI https://doi.org/10.1002/adma.201301362 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84882706953&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(819c27fc-420c-4681-b051-054a2728bc7c).html

Abstract

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research Area(s)

contact printing, III-V nanowire field-effect transistors, inverters, metal decoration, n-channel metal-oxide-semiconductor (NMOS), threshold voltage modulation

Citation Format(s)

[ RIS ] [ BibTeX ]

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. / Han, Ning; Wang, Fengyun; Hou, Jared J. et al.
In: Advanced Materials, Vol. 25, No. 32, 27.08.2013, p. 4445-4451.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Han, N, Wang, F, Hou, JJ, Yip, SP, Lin, H, Xiu, F, Fang, M, Yang, Z, Shi, X, Dong, G, Hung, TF & Ho, JC 2013, 'Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors', Advanced Materials, vol. 25, no. 32, pp. 4445-4451. https://doi.org/10.1002/adma.201301362

Han, N., Wang, F., Hou, J. J., Yip, S. P., Lin, H., Xiu, F., Fang, M., Yang, Z., Shi, X., Dong, G., Hung, T. F., & Ho, J. C. (2013). Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. Advanced Materials, 25(32), 4445-4451. https://doi.org/10.1002/adma.201301362

Han N, Wang F, Hou JJ, Yip SP, Lin H, Xiu F et al. Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. Advanced Materials. 2013 Aug 27;25(32):4445-4451. doi: 10.1002/adma.201301362

Han, Ning ; Wang, Fengyun ; Hou, Jared J. et al. / Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors. In: Advanced Materials. 2013 ; Vol. 25, No. 32. pp. 4445-4451.