Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han; Fengyun Wang; Jared J. Hou; Sen Po Yip; Hao Lin; Fei Xiu; Ming Fang; Zaixing Yang; Xiaoling Shi; Guofa Dong; Tak Fu Hung; Johnny C. Ho

doi:10.1002/adma.201301362

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han
, Fengyun Wang
, Jared J. Hou
, Sen Po Yip
, Hao Lin
, Fei Xiu
, Ming Fang
, Zaixing Yang
, Xiaoling Shi
, Guofa Dong
, Tak Fu Hung
, Johnny C. Ho

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

69 Citations (Scopus)

Abstract

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	4445-4451
Journal	Advanced Materials
Volume	25
Issue number	32
DOIs	https://doi.org/10.1002/adma.201301362
Publication status	Published - 27 Aug 2013

Research Keywords

contact printing
III-V nanowire field-effect transistors
inverters
metal decoration
n-channel metal-oxide-semiconductor (NMOS)
threshold voltage modulation

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@article{819c27fc420c4681b051054a2728bc7c,

title = "Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors",

abstract = "A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters. Copyright {\textcopyright} 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

keywords = "contact printing, III-V nanowire field-effect transistors, inverters, metal decoration, n-channel metal-oxide-semiconductor (NMOS), threshold voltage modulation",

author = "Ning Han and Fengyun Wang and Hou, \{Jared J.\} and Yip, \{Sen Po\} and Hao Lin and Fei Xiu and Ming Fang and Zaixing Yang and Xiaoling Shi and Guofa Dong and Hung, \{Tak Fu\} and Ho, \{Johnny C.\}",

year = "2013",

month = aug,

day = "27",

doi = "10.1002/adma.201301362",

language = "English",

volume = "25",

pages = "4445--4451",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "32",

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TY - JOUR

T1 - Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

AU - Han, Ning

AU - Wang, Fengyun

AU - Hou, Jared J.

AU - Yip, Sen Po

AU - Lin, Hao

AU - Xiu, Fei

AU - Fang, Ming

AU - Yang, Zaixing

AU - Shi, Xiaoling

AU - Dong, Guofa

AU - Hung, Tak Fu

AU - Ho, Johnny C.

PY - 2013/8/27

Y1 - 2013/8/27

N2 - A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - contact printing

KW - III-V nanowire field-effect transistors

KW - inverters

KW - metal decoration

KW - n-channel metal-oxide-semiconductor (NMOS)

KW - threshold voltage modulation

UR - https://www.scopus.com/pages/publications/84882706953

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84882706953&origin=recordpage

U2 - 10.1002/adma.201301362

DO - 10.1002/adma.201301362

M3 - RGC 21 - Publication in refereed journal

SN - 0935-9648

VL - 25

SP - 4445

EP - 4451

JO - Advanced Materials

JF - Advanced Materials

IS - 32

ER -

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Abstract

Research Keywords

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