Tunable electronic transport properties of DyScO3 / SrTiO3 polar heterointerface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Article number122108
Journal / PublicationApplied Physics Letters
Volume98
Issue number12
Publication statusPublished - 21 Mar 2011
Externally publishedYes

Abstract

Electronic transport properties of DyScO3 / SrTiO3 polar heterointerface grown at different oxygen pressures are studied. This DyScO3 / SrTiO3 polar heterointerface exhibits much higher charge mobility, up to 104 cm2 V-1 s-1, compared to the LaAlO3 / SrTiO3 system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO3 film deposited under 10-4 mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction. © 2011 American Institute of Physics.