Tunable electrical properties of silicon nanowires via surface-ambient chemistry

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • G. D. Yuan
  • Y. B. Zhou
  • C. S. Guo
  • Y. B. Tang
  • Y. Q. Li
  • Z. H. Chen
  • Z. B. He
  • X. J. Zhang
  • P. F. Wang
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)3045-3052
Journal / PublicationACS Nano
Volume4
Issue number6
Publication statusPublished - 22 Jun 2010

Abstract

P-Type surface conductivity is a uniquely important property of hydrogen-terminated diamond surfaces. In this work, we report similar surface-dominated electrical properties in silicon nanowires (SiNWs). Significantly, we demonstrate tunable and reversible transition of p +-p-i-n-n+ conductance in nominally intrinsic SiNWs via changing surface conditions, in sharp contrast to the only p-type conduction observed on diamond surfaces. On the basis of Si band energies and the electrochemical potentials of the ambient (pH value)-determined adsorbed aqueous layer, we propose an electron-transfer-dominated surface doping model, which can satisfactorily explain both diamond and silicon surface conductivity. The totality of our observations suggests that nanomaterials can be described as a core-shell structure due to their large surface-to-volume ratio. Consequently, controlling the surface or shell in the core-shell model represents a universal way to tune the properties of nanostructures, such as via surface-transfer doping, and is crucial for the development of nanostructure-based devices. © 2010 American Chemical Society.

Research Area(s)

  • Core-shell model, Electronic properties, Field-effect transistors, Silicon nanowires, Surface charge-transfer doping

Citation Format(s)

Tunable electrical properties of silicon nanowires via surface-ambient chemistry. / Yuan, G. D.; Zhou, Y. B.; Guo, C. S.; Zhang, W. J.; Tang, Y. B.; Li, Y. Q.; Chen, Z. H.; He, Z. B.; Zhang, X. J.; Wang, P. F.; Bello, I.; Zhang, R. Q.; Lee, C. S.; Lee, S. T.

In: ACS Nano, Vol. 4, No. 6, 22.06.2010, p. 3045-3052.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review