True near-field optical characters of a GaAlAs semiconductor laser diode
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 4463-4465 |
| Journal / Publication | Review of Scientific Instruments |
| Volume | 70 |
| Issue number | 12 |
| Publication status | Published - Dec 1999 |
| Externally published | Yes |
Link(s)
Abstract
In this research we have taken advantage of near-field scanning optical microscopy, a recently developed technique, to test the optical nature of GaAlAs semiconductor laser diodes working at 780 nm. With this method, both the images of the topographic and the near-field intensity of the laser diodes can be simultaneously obtained. With the obtained results, we can analyze the variety of the geometric structure, the local near-field optical intensity, the propagating modes, and the near-field mode-field diameter at different working states of the laser diodes. Hereby, we can find the factors that affected the radiation cavity of the laser diode and explore its alive state. © 1999 American Institute of Physics.
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.
Citation Format(s)
True near-field optical characters of a GaAlAs semiconductor laser diode. / Chen, Sy-Hann; Tsai, Din Ping; Chen, Yung-Fu et al.
In: Review of Scientific Instruments, Vol. 70, No. 12, 12.1999, p. 4463-4465.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
