True near-field optical characters of a GaAlAs semiconductor laser diode

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)4463-4465
Journal / PublicationReview of Scientific Instruments
Volume70
Issue number12
Publication statusPublished - Dec 1999
Externally publishedYes

Abstract

In this research we have taken advantage of near-field scanning optical microscopy, a recently developed technique, to test the optical nature of GaAlAs semiconductor laser diodes working at 780 nm. With this method, both the images of the topographic and the near-field intensity of the laser diodes can be simultaneously obtained. With the obtained results, we can analyze the variety of the geometric structure, the local near-field optical intensity, the propagating modes, and the near-field mode-field diameter at different working states of the laser diodes. Hereby, we can find the factors that affected the radiation cavity of the laser diode and explore its alive state. © 1999 American Institute of Physics.

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Citation Format(s)

True near-field optical characters of a GaAlAs semiconductor laser diode. / Chen, Sy-Hann; Tsai, Din Ping; Chen, Yung-Fu; Ong, Pang-Ming.

In: Review of Scientific Instruments, Vol. 70, No. 12, 12.1999, p. 4463-4465.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review