True near-field optical characters of a GaAlAs semiconductor laser diode

Sy-Hann Chen; Din Ping Tsai; Yung-Fu Chen; Pang-Ming Ong

doi:10.1063/1.1150097

True near-field optical characters of a GaAlAs semiconductor laser diode

Sy-Hann Chen
, Din Ping Tsai
, Yung-Fu Chen
, Pang-Ming Ong

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

In this research we have taken advantage of near-field scanning optical microscopy, a recently developed technique, to test the optical nature of GaAlAs semiconductor laser diodes working at 780 nm. With this method, both the images of the topographic and the near-field intensity of the laser diodes can be simultaneously obtained. With the obtained results, we can analyze the variety of the geometric structure, the local near-field optical intensity, the propagating modes, and the near-field mode-field diameter at different working states of the laser diodes. Hereby, we can find the factors that affected the radiation cavity of the laser diode and explore its alive state. © 1999 American Institute of Physics.

Original language	English
Pages (from-to)	4463-4465
Journal	Review of Scientific Instruments
Volume	70
Issue number	12
DOIs	https://doi.org/10.1063/1.1150097
Publication status	Published - Dec 1999
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "True near-field optical characters of a GaAlAs semiconductor laser diode",

abstract = "In this research we have taken advantage of near-field scanning optical microscopy, a recently developed technique, to test the optical nature of GaAlAs semiconductor laser diodes working at 780 nm. With this method, both the images of the topographic and the near-field intensity of the laser diodes can be simultaneously obtained. With the obtained results, we can analyze the variety of the geometric structure, the local near-field optical intensity, the propagating modes, and the near-field mode-field diameter at different working states of the laser diodes. Hereby, we can find the factors that affected the radiation cavity of the laser diode and explore its alive state. {\textcopyright} 1999 American Institute of Physics.",

author = "Sy-Hann Chen and Tsai, \{Din Ping\} and Yung-Fu Chen and Pang-Ming Ong",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected]. ",

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doi = "10.1063/1.1150097",

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pages = "4463--4465",

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publisher = "American Institute of Physics",

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T1 - True near-field optical characters of a GaAlAs semiconductor laser diode

AU - Chen, Sy-Hann

AU - Tsai, Din Ping

AU - Chen, Yung-Fu

AU - Ong, Pang-Ming

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1999/12

Y1 - 1999/12

N2 - In this research we have taken advantage of near-field scanning optical microscopy, a recently developed technique, to test the optical nature of GaAlAs semiconductor laser diodes working at 780 nm. With this method, both the images of the topographic and the near-field intensity of the laser diodes can be simultaneously obtained. With the obtained results, we can analyze the variety of the geometric structure, the local near-field optical intensity, the propagating modes, and the near-field mode-field diameter at different working states of the laser diodes. Hereby, we can find the factors that affected the radiation cavity of the laser diode and explore its alive state. © 1999 American Institute of Physics.

AB - In this research we have taken advantage of near-field scanning optical microscopy, a recently developed technique, to test the optical nature of GaAlAs semiconductor laser diodes working at 780 nm. With this method, both the images of the topographic and the near-field intensity of the laser diodes can be simultaneously obtained. With the obtained results, we can analyze the variety of the geometric structure, the local near-field optical intensity, the propagating modes, and the near-field mode-field diameter at different working states of the laser diodes. Hereby, we can find the factors that affected the radiation cavity of the laser diode and explore its alive state. © 1999 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/0042094864

UR - https://www.scopus.com/pages/publications/0042094864#tab=impact

U2 - 10.1063/1.1150097

DO - 10.1063/1.1150097

M3 - RGC 21 - Publication in refereed journal

SN - 0034-6748

VL - 70

SP - 4463

EP - 4465

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 12

ER -

True near-field optical characters of a GaAlAs semiconductor laser diode

Abstract

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