Trimming of high-Q-factor silicon ring resonators by electron beam bleaching

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)3114-3116
Journal / PublicationOptics Letters
Volume37
Issue number15
Online published20 Jul 2012
Publication statusPublished - 1 Aug 2012
Externally publishedYes

Abstract

We demonstrate a novel position-resolved resonance trimming strategy for silicon ring resonators. Ring resonators are covered with a chromophore-doped guest host polymer cladding. Illumination of the polymer cladding with high-energy electrons causes a bleaching of the chromophore molecules. Bleaching of the chromophores induces a reduction of the polymer refractive index, which can be used to trim the resonance frequency of the ring resonators. A maximum refractive index change of 0.06 and a TM polarization resonance shift of 16.4 nm have been measured. A Q factor of 20,000 before bleaching remains unaltered after the electron beam exposure process.

Citation Format(s)

Trimming of high-Q-factor silicon ring resonators by electron beam bleaching. / Prorok, Stefan; Petrov, Alexander Yu.; Eich, Manfred et al.
In: Optics Letters, Vol. 37, No. 15, 01.08.2012, p. 3114-3116.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review