Trilayered MoS2 Metal–Semiconductor–Metal Photodetectors : Photogain and Radiation Resistance

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Material Science

100
Metal Material Science
80
Semiconductor Mater... Material Science
20
Electrode Material Science
20
Bending Material Science
20
Schottky Barrier Material Science
20
Surface (Surface Sc... Material Science
20
Nanostructured Mate... Material Science

Keyphrases

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Trilayer Keyphrases
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Radiation Resistanc... Keyphrases
100
Photodetector Keyphrases
100
Molybdenite Keyphrases
100
Photogain Keyphrases
42
Metal-semiconductor... Keyphrases
14
Schottky Barrier He... Keyphrases
14
Band Bending Keyphrases
14
Rise Time Keyphrases
14
Fall Time Keyphrases
14
Surface States Keyphrases
14
MeV Protons Keyphrases
14
Operation Speed Keyphrases
14
Applied Bias Keyphrases
14
Photocarriers Keyphrases
14
Au Electrode Keyphrases
14
High Radiation Keyphrases
14
2D Nanomaterials Keyphrases
14
High Responsivity Keyphrases
14
Radiation Tolerance Keyphrases
14
Nanomaterial Applic... Keyphrases
14
Fast Operation Keyphrases
14
Harsh Electronics Keyphrases
14
Metal-semiconductor... Keyphrases

INIS

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metals INIS
100
radiations INIS
100
photodetectors INIS
80
semiconductor mater... INIS
40
interfaces INIS
20
speed INIS
20
surfaces INIS
20
barriers INIS
20
tolerance INIS
20
dimensions INIS
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applications INIS
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trapping INIS
20
protons INIS
20
height INIS
20
bending INIS
20
electrodes INIS
20
operation INIS
20
rise time INIS
20
MeV range INIS
20
illumination INIS
20
nanomaterials INIS
Research OutputsResearch Output authored by Trilayered MoS2 Metal–Semiconductor–Metal Photodetectors is tagged with the concept