Transport of charge and electronic structure of traps in SONOS structures

V. A. Gritsenko; Yu N. Novikov; Yu N. Morokov; H. Wong

doi:10.1109/HKEDM.1997.642335

Transport of charge and electronic structure of traps in SONOS structures

V. A. Gritsenko, Yu N. Novikov, Yu N. Morokov, H. Wong

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si₃N₄ and 1.5 eV for hole injecting from Au/Si₃N₄ interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si₃N₄ can traps both electrons and holes.

Original language	English
Title of host publication	Proceedings - 1997 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	74-77
ISBN (Print)	0-7803-3802-2
DOIs	https://doi.org/10.1109/HKEDM.1997.642335
Publication status	Published - Aug 1997
Event	1997 IEEE Hong Kong Electron Devices Meeting - City University of Hong Kong, Hong Kong, China Duration: 30 Aug 1997 → 30 Aug 1997

Conference

Conference	1997 IEEE Hong Kong Electron Devices Meeting
Abbreviated title	HKEDM'97
Place	Hong Kong, China
Period	30/08/97 → 30/08/97

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@inproceedings{383e202208d64ce886759cecf3ff249e,

title = "Transport of charge and electronic structure of traps in SONOS structures",

abstract = "In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si3N4 and 1.5 eV for hole injecting from Au/Si3N4 interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si3N4 can traps both electrons and holes.",

author = "Gritsenko, {V. A.} and Novikov, {Yu N.} and Morokov, {Yu N.} and H. Wong",

year = "1997",

month = aug,

doi = "10.1109/HKEDM.1997.642335",

language = "English",

isbn = "0-7803-3802-2",

pages = "74--77",

booktitle = "Proceedings - 1997 IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "1997 IEEE Hong Kong Electron Devices Meeting, HKEDM'97 ; Conference date: 30-08-1997 Through 30-08-1997",

}

TY - GEN

T1 - Transport of charge and electronic structure of traps in SONOS structures

AU - Gritsenko, V. A.

AU - Novikov, Yu N.

AU - Morokov, Yu N.

AU - Wong, H.

PY - 1997/8

Y1 - 1997/8

N2 - In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si3N4 and 1.5 eV for hole injecting from Au/Si3N4 interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si3N4 can traps both electrons and holes.

AB - In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si3N4 and 1.5 eV for hole injecting from Au/Si3N4 interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si3N4 can traps both electrons and holes.

UR - http://www.scopus.com/inward/record.url?scp=0031345220&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0031345220&origin=recordpage

U2 - 10.1109/HKEDM.1997.642335

DO - 10.1109/HKEDM.1997.642335

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-3802-2

SP - 74

EP - 77

BT - Proceedings - 1997 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 1997 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 August 1997 through 30 August 1997

ER -

Transport of charge and electronic structure of traps in SONOS structures

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