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Transparent NixCd1−xO1+δ alloy thin films with bipolar conductivity

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

NiO-CdO alloy films over the entire composition range were synthesized by RT magnetron sputtering in both pure Ar (NixCd1-xO) and Ar +O2(NixCd1-xO1+δ) environments. These alloy films are nanocrystalline with rocksalt structure. We demonstrated that in the alloy composition range of 0.38 ≤ x ≤ 0.52, NixCd1-xO1+δ films with bipolar (i.e., n- or p-type) conductivity can be achieved by controlling the oxygen stoichiometry. Within this composition range the band gap of the alloy is ~3-3.3 eV with transmittance >50% in the visible range. The unusual electrical and optical properties of NixCd1-xO1+δ alloy thin films can be explained by the modifications of the electronic band structure due to anticrossing interactions between localized Ni d levels and extended valence and conduction band states of the alloy. In addition, we studied the transport mechanism of p-type NixCd1-xO1+δ alloy films and found that the hole mobility increases with temperature in the range of 400-450 K. This is consistent with hole transport via a small polaron hopping process with an activation energy Ea of 0.174 eV (x=1) to 0.331 eV (x=0.47). These results strongly suggest that the nanocrystalline NixCd1-xO1+δ alloy system has great technological potential for applications in transparent optoelectronic device.
Original languageEnglish
Title of host publication2019 Compound Semiconductor Week (CSW) - Proceedings
PublisherIEEE
ISBN (Electronic)978-1-7281-0080-7
DOIs
Publication statusPublished - 2019
Event2019 Compound Semiconductor Week Conference (CSW 2019) - Nara, Japan
Duration: 19 May 201923 May 2019

Publication series

NameCompound Semiconductor Week, CSW
PublisherIEEE

Conference

Conference2019 Compound Semiconductor Week Conference (CSW 2019)
Abbreviated titleCSW2019
PlaceJapan
CityNara
Period19/05/1923/05/19

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