@inproceedings{3158379237c344d9abe1054efb20aac2,
title = "Transparent NixCd1−xO1+δ alloy thin films with bipolar conductivity",
abstract = "NiO-CdO alloy films over the entire composition range were synthesized by RT magnetron sputtering in both pure Ar (NixCd1-xO) and Ar +O2(NixCd1-xO1+δ) environments. These alloy films are nanocrystalline with rocksalt structure. We demonstrated that in the alloy composition range of 0.38 ≤ x ≤ 0.52, NixCd1-xO1+δ films with bipolar (i.e., n- or p-type) conductivity can be achieved by controlling the oxygen stoichiometry. Within this composition range the band gap of the alloy is \textasciitilde{}3-3.3 eV with transmittance >50\% in the visible range. The unusual electrical and optical properties of NixCd1-xO1+δ alloy thin films can be explained by the modifications of the electronic band structure due to anticrossing interactions between localized Ni d levels and extended valence and conduction band states of the alloy. In addition, we studied the transport mechanism of p-type NixCd1-xO1+δ alloy films and found that the hole mobility increases with temperature in the range of 400-450 K. This is consistent with hole transport via a small polaron hopping process with an activation energy Ea of 0.174 eV (x=1) to 0.331 eV (x=0.47). These results strongly suggest that the nanocrystalline NixCd1-xO1+δ alloy system has great technological potential for applications in transparent optoelectronic device.",
author = "LIU, \{Chao Ping\} and Egbo, \{Kingsley O.\} and Ho, \{Chun Yuen\} and Walukiewicz Wladek and Yu, \{Kin Man\}",
year = "2019",
doi = "10.1109/ICIPRM.2019.8819291",
language = "English",
series = "Compound Semiconductor Week, CSW",
publisher = "IEEE",
booktitle = "2019 Compound Semiconductor Week (CSW) - Proceedings",
address = "United States",
note = "2019 Compound Semiconductor Week Conference (CSW 2019), CSW2019 ; Conference date: 19-05-2019 Through 23-05-2019",
}