Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy

Li Chang; Tzer-Shen Lin; Jiun-Long Chen; Fu-Rong Chen

doi:10.1063/1.109043

Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy

Li Chang, Tzer-Shen Lin, Jiun-Long Chen, Fu-Rong Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.

Original language	English
Pages (from-to)	3444-3446
Journal	Applied Physics Letters
Volume	62
Issue number	26
DOIs	https://doi.org/10.1063/1.109043
Publication status	Published - 28 Jun 1993
Externally published	Yes

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@article{912bbcc135b7437f9fe593c510ae6c0a,

title = "Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy",

abstract = "Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.",

author = "Li Chang and Tzer-Shen Lin and Jiun-Long Chen and Fu-Rong Chen",

year = "1993",

month = jun,

day = "28",

doi = "10.1063/1.109043",

language = "English",

volume = "62",

pages = "3444--3446",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy

AU - Chang, Li

AU - Lin, Tzer-Shen

AU - Chen, Jiun-Long

AU - Chen, Fu-Rong

PY - 1993/6/28

Y1 - 1993/6/28

N2 - Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.

AB - Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.

UR - http://www.scopus.com/inward/record.url?scp=0000856495&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0000856495&origin=recordpage

U2 - 10.1063/1.109043

DO - 10.1063/1.109043

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 62

SP - 3444

EP - 3446

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy

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