TY - GEN
T1 - Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect
AU - Zhao, Wen-Sheng
AU - Guo, Yong-Xin
AU - Yin, Wen-Yan
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2011
Y1 - 2011
N2 - Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect are studied according to our proposed lumped-element circuit model in this paper, with some numerical results given for their design as well as optimization. The influences of their geometrical and physical parameters involved on their transmission and reflection parameters are examined and compared in detail, such as substrate conductivity, radius of the inner cylinder and its electrical conductivity, etc. It is expected that C-TSVs are better choices than that of normal TSV interconnects for effectively suppressing electromagnetic coupling among them, with signal transmission quality improved greatly. Finally, based on our own developed algorithm, the electrothermal responses of a C-TSV interconnect injected with a trapezoidal voltage pulse are also studied, with the temperature-dependent parameters treated appropriately. © 2011 IEEE.
AB - Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect are studied according to our proposed lumped-element circuit model in this paper, with some numerical results given for their design as well as optimization. The influences of their geometrical and physical parameters involved on their transmission and reflection parameters are examined and compared in detail, such as substrate conductivity, radius of the inner cylinder and its electrical conductivity, etc. It is expected that C-TSVs are better choices than that of normal TSV interconnects for effectively suppressing electromagnetic coupling among them, with signal transmission quality improved greatly. Finally, based on our own developed algorithm, the electrothermal responses of a C-TSV interconnect injected with a trapezoidal voltage pulse are also studied, with the temperature-dependent parameters treated appropriately. © 2011 IEEE.
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U2 - 10.1109/ISEMC.2011.6038339
DO - 10.1109/ISEMC.2011.6038339
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781424447831
T3 - IEEE International Symposium on Electromagnetic Compatibility
SP - 373
EP - 378
BT - EMC 2011 - Proceedings: 2011 IEEE International Symposium on Electromagnetic Compatibility
T2 - 2011 IEEE International Symposium on Electromagnetic Compatibility, EMC 2011
Y2 - 14 August 2011 through 19 August 2011
ER -