Transient sensitivity of sectorial split-drain magnetic field-effect transistor

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

8 Scopus Citations
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Author(s)

  • Zhenyi Yang
  • Sik-Lam Siu
  • Wing-Shan Tam
  • Chi-Wah Kok
  • Chi-Wah Leung
  • P. T. Lai
  • P. W T Pong

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number6559182
Pages (from-to)4048-4051
Journal / PublicationIEEE Transactions on Magnetics
Volume49
Issue number7
Publication statusPublished - 2013

Abstract

This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs. © 2013 IEEE.

Research Area(s)

  • Hysteresis, magnetic field-effect transistor (MAGFET), sectorial, sensitivity, split-drain, transient sensitivity

Citation Format(s)

Transient sensitivity of sectorial split-drain magnetic field-effect transistor. / Yang, Zhenyi; Siu, Sik-Lam; Tam, Wing-Shan et al.
In: IEEE Transactions on Magnetics, Vol. 49, No. 7, 6559182, 2013, p. 4048-4051.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review