TY - JOUR
T1 - Transformation of enhanced glow discharge dynamics in nitrogen plasma immersion ion implantation
AU - Lu, Qiuyuan
AU - Li, Liuhe
AU - Li, Penghui
AU - Xu, Ruizhen
AU - Fu, Ricky King-Yu
AU - Chu, Paul K.
PY - 2013
Y1 - 2013
N2 - In nitrogen enhanced glow discharge plasma immersion ion implantation, the implantation current increases sharply with the gas pressure when a threshold pressure is exceeded, indicating that the glow discharge dynamics changes with increasing diatomic gas flow rate. The voltage drop rendered by the anode glow produces noticeable N2
+ dissociation and electron-atom ionization in the positive column which expands to the cathode. As a result, charged particles reach the cathode more easily, and the larger plasma density and N+/N2
+ ratio in the positive column lead to the higher current. Our results clarify the implantation current characteristics and expedite adoption of this alternative plasma immersion technology. © 1973-2012 IEEE.
AB - In nitrogen enhanced glow discharge plasma immersion ion implantation, the implantation current increases sharply with the gas pressure when a threshold pressure is exceeded, indicating that the glow discharge dynamics changes with increasing diatomic gas flow rate. The voltage drop rendered by the anode glow produces noticeable N2
+ dissociation and electron-atom ionization in the positive column which expands to the cathode. As a result, charged particles reach the cathode more easily, and the larger plasma density and N+/N2
+ ratio in the positive column lead to the higher current. Our results clarify the implantation current characteristics and expedite adoption of this alternative plasma immersion technology. © 1973-2012 IEEE.
KW - Glow discharge
KW - implantation current
KW - ionization
KW - plasma immersion ion implantation (PIII)
KW - voltage drop
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U2 - 10.1109/TPS.2013.2243131
DO - 10.1109/TPS.2013.2243131
M3 - RGC 21 - Publication in refereed journal
SN - 0093-3813
VL - 41
SP - 553
EP - 558
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 3
M1 - 6471837
ER -