TY - JOUR
T1 - Towards identification of localized donor states in InN
AU - Plesiewicz, J.
AU - Suski, T.
AU - Dmowski, L.
AU - Walukiewicz, W.
AU - Yu, K. M.
AU - Korman, A.
AU - Ratajczak, R.
AU - Stonert, A.
AU - Lu, Hai
AU - Schaff, W.
PY - 2007/10/1
Y1 - 2007/10/1
N2 - Transport studies of as-grown and proton-irradiated n-InN have been performed aiming at verification of the nature of localized donor states resonant with the InN conduction band. These resonant donor states (RDS) show a clear contribution to the electrical conduction in low electron concentration InN epitaxial layers. We used proton irradiation to increase the number of incorporated native point defects of donor character in InN layers. Then, the performed studies of pressure dependence of the Hall electron concentration clearly show no increase in the number of RDS in samples exposed to irradiation in spite of the increase in the conducting electron concentration. © 2007 IOP Publishing Ltd.
AB - Transport studies of as-grown and proton-irradiated n-InN have been performed aiming at verification of the nature of localized donor states resonant with the InN conduction band. These resonant donor states (RDS) show a clear contribution to the electrical conduction in low electron concentration InN epitaxial layers. We used proton irradiation to increase the number of incorporated native point defects of donor character in InN layers. Then, the performed studies of pressure dependence of the Hall electron concentration clearly show no increase in the number of RDS in samples exposed to irradiation in spite of the increase in the conducting electron concentration. © 2007 IOP Publishing Ltd.
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U2 - 10.1088/0268-1242/22/10/014
DO - 10.1088/0268-1242/22/10/014
M3 - RGC 21 - Publication in refereed journal
SN - 0268-1242
VL - 22
SP - 1161
EP - 1164
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 10
M1 - 14
ER -