To suppress tin whisker growth by using (100)-oriented copper

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Han-Wen Lin
  • Jia-Ling Lu
  • Chih-Chia Hu
  • K. N. Tu
  • Chih Chen

Detail(s)

Original languageEnglish
Pages (from-to)3217-3225
Journal / PublicationJournal of Materials Research and Technology
Volume35
Online published4 Feb 2025
Publication statusPublished - Mar 2025

Link(s)

Abstract

Effect of Cu crystallographic orientations on the Sn whisker growth is investigated in this study. Three types of Cu under-layer (randomly, <111>, <100>-oriented) were prepared for electroplating of pure Sn. After 672 h of room temperature (RT) storage, a lot of whiskers were found on the Sn surface electroplated on the randomly-oriented Cu, whereas very few whiskers can be seen on those electroplated on the <111>− or the <100>-oriented Cu. It is also found that the behavior of intermetallic compound (IMC) growth at the Sn–Cu interface is quite different between the randomly- and specifically-oriented Cu films, which leads to divergent phenomena of Sn whisker growth. Furthermore, after 7944 h of RT storage, both the <111>− and the <100>-oriented Cu films are proven to be effective on preventing Sn whisker growth. Orientation analysis indicated the Sn grains on the <111>− and the <100>-oriented Cu possesses <110> preferred orientation, which may slow down the formation of the Cu–Sn IMCs. © 2025 The Authors

Research Area(s)

Citation Format(s)

To suppress tin whisker growth by using (100)-oriented copper. / Lin, Han-Wen; Lu, Jia-Ling; Hu, Chih-Chia et al.
In: Journal of Materials Research and Technology, Vol. 35, 03.2025, p. 3217-3225.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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