To suppress tin whisker growth by using (100)-oriented copper
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Original language | English |
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Pages (from-to) | 3217-3225 |
Journal / Publication | Journal of Materials Research and Technology |
Volume | 35 |
Online published | 4 Feb 2025 |
Publication status | Published - Mar 2025 |
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85217078720&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(cd2a5b4e-9cad-417f-816e-19b9c68c7fe5).html |
Abstract
Effect of Cu crystallographic orientations on the Sn whisker growth is investigated in this study. Three types of Cu under-layer (randomly, <111>, <100>-oriented) were prepared for electroplating of pure Sn. After 672 h of room temperature (RT) storage, a lot of whiskers were found on the Sn surface electroplated on the randomly-oriented Cu, whereas very few whiskers can be seen on those electroplated on the <111>− or the <100>-oriented Cu. It is also found that the behavior of intermetallic compound (IMC) growth at the Sn–Cu interface is quite different between the randomly- and specifically-oriented Cu films, which leads to divergent phenomena of Sn whisker growth. Furthermore, after 7944 h of RT storage, both the <111>− and the <100>-oriented Cu films are proven to be effective on preventing Sn whisker growth. Orientation analysis indicated the Sn grains on the <111>− and the <100>-oriented Cu possesses <110> preferred orientation, which may slow down the formation of the Cu–Sn IMCs. © 2025 The Authors
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To suppress tin whisker growth by using (100)-oriented copper. / Lin, Han-Wen; Lu, Jia-Ling; Hu, Chih-Chia et al.
In: Journal of Materials Research and Technology, Vol. 35, 03.2025, p. 3217-3225.
In: Journal of Materials Research and Technology, Vol. 35, 03.2025, p. 3217-3225.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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