Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1599-1605 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 59 |
| Issue number | 5 |
| Publication status | Published - 1986 |
| Externally published | Yes |
Link(s)
Abstract
An investigation of the thermal stability and Schottky behavior of Ti-W thin film contacts to n-Si in the presence of an Al overlayer is reported. Rutherford backscattering spectroscopy, glancing-incidence x-ray diffraction, and current-voltage measurements were used to characterize the multilayer contact structures. The low Schottky barrier height, 0.51 eV, of the Al/Ti 80W20/n-Si structure was repeatedly measured after 30-min anneals up to 500°C. This stability was improved to 600°C when a diffusion barrier layer of Ti30W 70 alloy was included. The detection and significance of Al penetration in low Schottky barrier height contacts to Si have been discussed.
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.
Citation Format(s)
Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration. / Babcock, S. E.; Tu, K. N.
In: Journal of Applied Physics, Vol. 59, No. 5, 1986, p. 1599-1605.
In: Journal of Applied Physics, Vol. 59, No. 5, 1986, p. 1599-1605.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
