Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation

S. E. Babcock; K. N. Tu

doi:10.1063/1.330031

Titanium-tungsten contacts to Si : The effects of alloying on Schottky contact and on silicide formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Overview

11 Scopus Citations

Scopus Metrics

View graph of relations

Author(s)

S. E. Babcock
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	6898-6905
Journal / Publication	Journal of Applied Physics
Volume	53
Issue number	10
Publication status	Published - 1982
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.330031 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0020191312&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(0d2298b6-84f0-491a-b929-d39943e63fe7).html

Abstract

Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti₈W₂, Ti ₄W₆, Ti₂W₈) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti₈W₂/Ti₃ W ₇/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

[ RIS ] [ BibTeX ]

Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation. / Babcock, S. E.; Tu, K. N.
In: Journal of Applied Physics, Vol. 53, No. 10, 1982, p. 6898-6905.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Babcock, SE & Tu, KN 1982, 'Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation', Journal of Applied Physics, vol. 53, no. 10, pp. 6898-6905. https://doi.org/10.1063/1.330031

Babcock, S. E., & Tu, K. N. (1982). Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation. Journal of Applied Physics, 53(10), 6898-6905. https://doi.org/10.1063/1.330031

Babcock SE, Tu KN. Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation. Journal of Applied Physics. 1982;53(10):6898-6905. doi: 10.1063/1.330031

Babcock, S. E. ; Tu, K. N. / Titanium-tungsten contacts to Si : The effects of alloying on Schottky contact and on silicide formation. In: Journal of Applied Physics. 1982 ; Vol. 53, No. 10. pp. 6898-6905.