TY - JOUR
T1 - Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration
AU - Babcock, S. E.
AU - Tu, K. N.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1986
Y1 - 1986
N2 - An investigation of the thermal stability and Schottky behavior of Ti-W thin film contacts to n-Si in the presence of an Al overlayer is reported. Rutherford backscattering spectroscopy, glancing-incidence x-ray diffraction, and current-voltage measurements were used to characterize the multilayer contact structures. The low Schottky barrier height, 0.51 eV, of the Al/Ti 80W20/n-Si structure was repeatedly measured after 30-min anneals up to 500°C. This stability was improved to 600°C when a diffusion barrier layer of Ti30W 70 alloy was included. The detection and significance of Al penetration in low Schottky barrier height contacts to Si have been discussed.
AB - An investigation of the thermal stability and Schottky behavior of Ti-W thin film contacts to n-Si in the presence of an Al overlayer is reported. Rutherford backscattering spectroscopy, glancing-incidence x-ray diffraction, and current-voltage measurements were used to characterize the multilayer contact structures. The low Schottky barrier height, 0.51 eV, of the Al/Ti 80W20/n-Si structure was repeatedly measured after 30-min anneals up to 500°C. This stability was improved to 600°C when a diffusion barrier layer of Ti30W 70 alloy was included. The detection and significance of Al penetration in low Schottky barrier height contacts to Si have been discussed.
UR - http://www.scopus.com/inward/record.url?scp=0345043081&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0345043081&origin=recordpage
U2 - 10.1063/1.336470
DO - 10.1063/1.336470
M3 - RGC 21 - Publication in refereed journal
SN - 0021-8979
VL - 59
SP - 1599
EP - 1605
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 5
ER -