Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation

S. E. Babcock; K. N. Tu

doi:10.1063/1.330031

Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation

S. E. Babcock
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

54 Citations (Scopus)

Abstract

Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti₈W₂, Ti ₄W₆, Ti₂W₈) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti₈W₂/Ti₃ W ₇/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.

Original language	English
Pages (from-to)	6898-6905
Journal	Journal of Applied Physics
Volume	53
Issue number	10
DOIs	https://doi.org/10.1063/1.330031
Publication status	Published - 1982
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{0d2298b684f0491ab929d39943e63fe7,

title = "Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation",

abstract = "Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti8W2, Ti 4W6, Ti2W8) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti8W2/Ti3 W 7/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.",

author = "Babcock, \{S. E.\} and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1982",

doi = "10.1063/1.330031",

language = "English",

volume = "53",

pages = "6898--6905",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Titanium-tungsten contacts to Si

T2 - The effects of alloying on Schottky contact and on silicide formation

AU - Babcock, S. E.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1982

Y1 - 1982

N2 - Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti8W2, Ti 4W6, Ti2W8) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti8W2/Ti3 W 7/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.

AB - Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti8W2, Ti 4W6, Ti2W8) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti8W2/Ti3 W 7/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.

UR - https://www.scopus.com/pages/publications/0020191312

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020191312&origin=recordpage

U2 - 10.1063/1.330031

DO - 10.1063/1.330031

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 53

SP - 6898

EP - 6905

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation

Abstract

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