THz transient photoconductivity of the III-V dilute nitride GaPy As1-y -x Nx

J. N. Heyman; E. M. Weiss; J. R. Rollag; K. M. Yu; O. D. Dubon; Y. J. Kuang; C. W. Tu; W. Walukiewicz

doi:10.1088/1361-6641/aae7c5

THz transient photoconductivity of the III-V dilute nitride GaP_yAs_1-y -_xN_x

J. N. Heyman^*, E. M. Weiss, J. R. Rollag, K. M. Yu, O. D. Dubon, Y. J. Kuang, C. W. Tu, W. Walukiewicz

^*Corresponding author for this work

Department of Physics

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

33 Downloads (CityUHK Scholars)

Abstract

THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP_0.49As_0.47N_0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2 0.8 10^-8 cm³ s^-1. We discuss the implications for applications in solar energy.

Original language	English
Article number	125009
Journal	Semiconductor Science and Technology
Volume	33
Issue number	12
Online published	11 Oct 2018
DOIs	https://doi.org/10.1088/1361-6641/aae7c5
Publication status	Published - 26 Oct 2018

Research Keywords

III-V N
intermediate band
photovoltaic
terahertz
ultrafast

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This full text is made available under CC-BY 3.0. https://creativecommons.org/licenses/by/3.0/

RGC Funding Information

RGC-funded

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1088/1361-6641/aae7c5

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title = "THz transient photoconductivity of the III-V dilute nitride GaPy As1-y -x Nx",

abstract = "THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2 0.8 10-8 cm3 s-1. We discuss the implications for applications in solar energy.",

keywords = "III-V N, intermediate band, photovoltaic, terahertz, ultrafast",

author = "Heyman, {J. N.} and Weiss, {E. M.} and Rollag, {J. R.} and Yu, {K. M.} and Dubon, {O. D.} and Kuang, {Y. J.} and Tu, {C. W.} and W. Walukiewicz",

year = "2018",

month = oct,

day = "26",

doi = "10.1088/1361-6641/aae7c5",

language = "English",

volume = "33",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

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TY - JOUR

T1 - THz transient photoconductivity of the III-V dilute nitride GaPy As1-y -x Nx

AU - Heyman, J. N.

AU - Weiss, E. M.

AU - Rollag, J. R.

AU - Yu, K. M.

AU - Dubon, O. D.

AU - Kuang, Y. J.

AU - Tu, C. W.

AU - Walukiewicz, W.

PY - 2018/10/26

Y1 - 2018/10/26

N2 - THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2 0.8 10-8 cm3 s-1. We discuss the implications for applications in solar energy.

AB - THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2 0.8 10-8 cm3 s-1. We discuss the implications for applications in solar energy.

KW - III-V N

KW - intermediate band

KW - photovoltaic

KW - terahertz

KW - ultrafast

UR - http://www.scopus.com/inward/record.url?scp=85057550442&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85057550442&origin=recordpage

U2 - 10.1088/1361-6641/aae7c5

DO - 10.1088/1361-6641/aae7c5

M3 - RGC 21 - Publication in refereed journal

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 125009

ER -

THz transient photoconductivity of the III-V dilute nitride GaP_yAs_1-y -_xN_x

Abstract

Research Keywords

Publisher's Copyright Statement

RGC Funding Information

UN SDGs

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GRF: Energy Band Engineering for Low Cost Photovoltaics with Abundant Materials

Cite this

THz transient photoconductivity of the III-V dilute nitride GaPy As1-y -x Nx

Abstract

Research Keywords

Publisher's Copyright Statement

RGC Funding Information

UN SDGs

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Permanent Link

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Projects

GRF: Energy Band Engineering for Low Cost Photovoltaics with Abundant Materials

Cite this

THz transient photoconductivity of the III-V dilute nitride GaP_yAs_1-y -_xN_x