Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins

Luhua Xu; Pradeep Dixit; Jianmin Miao; John H. L. Pang; Xi Zhang; K. N. Tu; Robert Preisser

doi:10.1063/1.2432284

Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins

Luhua Xu^*
, Pradeep Dixit
, Jianmin Miao
, John H. L. Pang
, Xi Zhang
, K. N. Tu
, Robert Preisser

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

91 Citations (Scopus)

Abstract

High aspect ratio (∼15) and ultrafine pitch (∼35 μm) through-wafer copper interconnection columns were fabricated by aspect-ratio-dependent electroplating. By controlling the process parameters, ultrafine copper grains with nanoscale twins (twin lamellar width ∼20 nm) were obtained in the copper columns. Transmission electron microscope reveals that the density of these nanotwins depends on the location along the length of the columns. The highest twin density was achieved at the bottom of the column where the electroplating starts. The presence of higher density of the nanotwins yields significant higher hardness (∼2.4 GPa) than that with lower twin density (∼1.8 GPa). The electrical conductivity of the electroplated copper (2.2 μ cm) is retained comparable to the pure copper. © 2007 American Institute of Physics.

Original language	English
Article number	033111
Journal	Applied Physics Letters
Volume	90
Issue number	3
Online published	17 Jan 2007
DOIs	https://doi.org/10.1063/1.2432284
Publication status	Published - Jan 2007
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins",

abstract = "High aspect ratio (∼15) and ultrafine pitch (∼35 μm) through-wafer copper interconnection columns were fabricated by aspect-ratio-dependent electroplating. By controlling the process parameters, ultrafine copper grains with nanoscale twins (twin lamellar width ∼20 nm) were obtained in the copper columns. Transmission electron microscope reveals that the density of these nanotwins depends on the location along the length of the columns. The highest twin density was achieved at the bottom of the column where the electroplating starts. The presence of higher density of the nanotwins yields significant higher hardness (∼2.4 GPa) than that with lower twin density (∼1.8 GPa). The electrical conductivity of the electroplated copper (2.2 μ cm) is retained comparable to the pure copper. {\textcopyright} 2007 American Institute of Physics.",

author = "Luhua Xu and Pradeep Dixit and Jianmin Miao and Pang, \{John H. L.\} and Xi Zhang and Tu, \{K. N.\} and Robert Preisser",

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TY - JOUR

T1 - Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins

AU - Xu, Luhua

AU - Dixit, Pradeep

AU - Miao, Jianmin

AU - Pang, John H. L.

AU - Zhang, Xi

AU - Tu, K. N.

AU - Preisser, Robert

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2007/1

Y1 - 2007/1

N2 - High aspect ratio (∼15) and ultrafine pitch (∼35 μm) through-wafer copper interconnection columns were fabricated by aspect-ratio-dependent electroplating. By controlling the process parameters, ultrafine copper grains with nanoscale twins (twin lamellar width ∼20 nm) were obtained in the copper columns. Transmission electron microscope reveals that the density of these nanotwins depends on the location along the length of the columns. The highest twin density was achieved at the bottom of the column where the electroplating starts. The presence of higher density of the nanotwins yields significant higher hardness (∼2.4 GPa) than that with lower twin density (∼1.8 GPa). The electrical conductivity of the electroplated copper (2.2 μ cm) is retained comparable to the pure copper. © 2007 American Institute of Physics.

AB - High aspect ratio (∼15) and ultrafine pitch (∼35 μm) through-wafer copper interconnection columns were fabricated by aspect-ratio-dependent electroplating. By controlling the process parameters, ultrafine copper grains with nanoscale twins (twin lamellar width ∼20 nm) were obtained in the copper columns. Transmission electron microscope reveals that the density of these nanotwins depends on the location along the length of the columns. The highest twin density was achieved at the bottom of the column where the electroplating starts. The presence of higher density of the nanotwins yields significant higher hardness (∼2.4 GPa) than that with lower twin density (∼1.8 GPa). The electrical conductivity of the electroplated copper (2.2 μ cm) is retained comparable to the pure copper. © 2007 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/33846410639

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U2 - 10.1063/1.2432284

DO - 10.1063/1.2432284

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033111

ER -

Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins

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