Thin β-SiC nanorods and their field emission properties

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • X. T. Zhou
  • H. L. Lai
  • H. Y. Peng
  • Frederick C.K. Au
  • L. S. Liao
  • N. Wang
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)58-62
Journal / PublicationChemical Physics Letters
Volume318
Issue number1-3
Publication statusPublished - 18 Feb 2000

Abstract

Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13-17 V/μm.

Citation Format(s)

Thin β-SiC nanorods and their field emission properties. / Zhou, X. T.; Lai, H. L.; Peng, H. Y.; Au, Frederick C.K.; Liao, L. S.; Wang, N.; Bello, I.; Lee, C. S.; Lee, S. T.

In: Chemical Physics Letters, Vol. 318, No. 1-3, 18.02.2000, p. 58-62.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review