Thin β-SiC nanorods and their field emission properties
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 58-62 |
| Journal / Publication | Chemical Physics Letters |
| Volume | 318 |
| Issue number | 1-3 |
| Publication status | Published - 18 Feb 2000 |
Link(s)
Abstract
Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13-17 V/μm.
Citation Format(s)
Thin β-SiC nanorods and their field emission properties. / Zhou, X. T.; Lai, H. L.; Peng, H. Y. et al.
In: Chemical Physics Letters, Vol. 318, No. 1-3, 18.02.2000, p. 58-62.
In: Chemical Physics Letters, Vol. 318, No. 1-3, 18.02.2000, p. 58-62.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
