Thin β-SiC nanorods and their field emission properties

X. T. Zhou; H. L. Lai; H. Y. Peng; Frederick C.K. Au; L. S. Liao; N. Wang; I. Bello; C. S. Lee; S. T. Lee

doi:10.1016/S0009-2614(99)01398-6

Thin β-SiC nanorods and their field emission properties

X. T. Zhou
, H. L. Lai
, H. Y. Peng
, Frederick C.K. Au
, L. S. Liao
, N. Wang
, I. Bello
, C. S. Lee
, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

134 Citations (Scopus)

Abstract

Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13-17 V/μm.

© 2000 Elsevier Science B.V.

Original language	English
Pages (from-to)	58-62
Journal	Chemical Physics Letters
Volume	318
Issue number	1-3
DOIs	https://doi.org/10.1016/S0009-2614(99)01398-6
Publication status	Published - 18 Feb 2000

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title = "Thin β-SiC nanorods and their field emission properties",

abstract = "Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13-17 V/μm. {\textcopyright} 2000 Elsevier Science B.V.",

author = "Zhou, \{X. T.\} and Lai, \{H. L.\} and Peng, \{H. Y.\} and Au, \{Frederick C.K.\} and Liao, \{L. S.\} and N. Wang and I. Bello and Lee, \{C. S.\} and Lee, \{S. T.\}",

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doi = "10.1016/S0009-2614(99)01398-6",

language = "English",

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pages = "58--62",

journal = "Chemical Physics Letters",

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TY - JOUR

T1 - Thin β-SiC nanorods and their field emission properties

AU - Zhou, X. T.

AU - Lai, H. L.

AU - Peng, H. Y.

AU - Au, Frederick C.K.

AU - Liao, L. S.

AU - Wang, N.

AU - Bello, I.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2000/2/18

Y1 - 2000/2/18

N2 - Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13-17 V/μm. © 2000 Elsevier Science B.V.

AB - Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13-17 V/μm. © 2000 Elsevier Science B.V.

UR - https://www.scopus.com/pages/publications/0002370208

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0002370208&origin=recordpage

U2 - 10.1016/S0009-2614(99)01398-6

DO - 10.1016/S0009-2614(99)01398-6

M3 - RGC 21 - Publication in refereed journal

SN - 0009-2614

VL - 318

SP - 58

EP - 62

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Thin β-SiC nanorods and their field emission properties

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