Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

Yang Li; Zilong Wang; Cheng Zhang; Peiyang Gu; Wangqiao Chen; Hua Li; Jianmei Lu; Qichun Zhang

doi:10.1021/acsami.8b05178

Author(s)

Yang Li
Zilong Wang
Cheng Zhang
Peiyang Gu
Wangqiao Chen
Hua Li
Jianmei Lu

Detail(s)

Original language	English
Pages (from-to)	15971-15979
Journal / Publication	ACS Applied Materials and Interfaces
Volume	10
Issue number	18
Online published	23 Apr 2018
Publication status	Published - 9 May 2018
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1021/acsami.8b05178 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85046253763&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(a1793cca-2a86-4a09-b937-744bd0e7b2ad).html

Abstract

A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (10^5.8:10^3.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.

Research Area(s)

conjugation, donor-acceptor systems, multilevel resistive switching, N-heteroacenes, nonvolatile memory

Citation Format(s)

[ RIS ] [ BibTeX ]

Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device. / Li, Yang; Wang, Zilong; Zhang, Cheng; Gu, Peiyang; Chen, Wangqiao; Li, Hua; Lu, Jianmei; Zhang, Qichun.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 18, 09.05.2018, p. 15971-15979.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Li, Y, Wang, Z, Zhang, C, Gu, P, Chen, W, Li, H, Lu, J & Zhang, Q 2018, 'Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device', ACS Applied Materials and Interfaces, vol. 10, no. 18, pp. 15971-15979. https://doi.org/10.1021/acsami.8b05178

Li, Y., Wang, Z., Zhang, C., Gu, P., Chen, W., Li, H., Lu, J., & Zhang, Q. (2018). Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device. ACS Applied Materials and Interfaces, 10(18), 15971-15979. https://doi.org/10.1021/acsami.8b05178

Li Y, Wang Z, Zhang C, Gu P, Chen W, Li H et al. Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device. ACS Applied Materials and Interfaces. 2018 May 9;10(18):15971-15979. https://doi.org/10.1021/acsami.8b05178

Li, Yang ; Wang, Zilong ; Zhang, Cheng ; Gu, Peiyang ; Chen, Wangqiao ; Li, Hua ; Lu, Jianmei ; Zhang, Qichun. / Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 18. pp. 15971-15979.