Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

18 Scopus Citations
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Author(s)

  • Yang Li
  • Zilong Wang
  • Cheng Zhang
  • Peiyang Gu
  • Wangqiao Chen
  • Hua Li
  • Jianmei Lu

Detail(s)

Original languageEnglish
Pages (from-to)15971-15979
Journal / PublicationACS Applied Materials and Interfaces
Volume10
Issue number18
Online published23 Apr 2018
Publication statusPublished - 9 May 2018
Externally publishedYes

Abstract

A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (105.8:103.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.

Research Area(s)

  • conjugation, donor-acceptor systems, multilevel resistive switching, N-heteroacenes, nonvolatile memory

Citation Format(s)

Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device. / Li, Yang; Wang, Zilong; Zhang, Cheng; Gu, Peiyang; Chen, Wangqiao; Li, Hua; Lu, Jianmei; Zhang, Qichun.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 18, 09.05.2018, p. 15971-15979.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review