TY - JOUR
T1 - Thermomigration and electromigration in Sn58Bi ball grid array solder joints
AU - Gu, X.
AU - Yung, K. C.
AU - Chan, Y. C.
PY - 2010/10
Y1 - 2010/10
N2 - In the present study, individual effect of thermomigration (TM) and combined effects of TM and electromigration (EM) in Sn58Bi ball grid array (BGA) solder joints were investigated using a particular designed daisy chain supplied with 2.5 A direct current (DC) at 110 °C. Driven by the electric current, Bi atoms migrated towards the anode side and formed a Bi-rich layer therein. With a thermal gradient, Bi atoms tended to accumulated at the low temperature side. When the effects of TM and EM were in same direction, TM assisted EM in the migration of Bi, otherwise it counteracted the effect of EM. The effect of electron charge swirling were detected when the electric current passed by the Cu trace on the top of the solder bump instead of entering into it. For the joint without current passing by or passing through, only TM induced the migration of the Bi atoms. © 2009 Springer Science+Business Media, LLC.
AB - In the present study, individual effect of thermomigration (TM) and combined effects of TM and electromigration (EM) in Sn58Bi ball grid array (BGA) solder joints were investigated using a particular designed daisy chain supplied with 2.5 A direct current (DC) at 110 °C. Driven by the electric current, Bi atoms migrated towards the anode side and formed a Bi-rich layer therein. With a thermal gradient, Bi atoms tended to accumulated at the low temperature side. When the effects of TM and EM were in same direction, TM assisted EM in the migration of Bi, otherwise it counteracted the effect of EM. The effect of electron charge swirling were detected when the electric current passed by the Cu trace on the top of the solder bump instead of entering into it. For the joint without current passing by or passing through, only TM induced the migration of the Bi atoms. © 2009 Springer Science+Business Media, LLC.
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U2 - 10.1007/s10854-009-9992-2
DO - 10.1007/s10854-009-9992-2
M3 - RGC 21 - Publication in refereed journal
SN - 0957-4522
VL - 21
SP - 1090
EP - 1098
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -