TY - JOUR
T1 - Thermoelectric performance in Ag2Se nanocomposites
T2 - The role of interstitial Ag and Pb orbital hybridization
AU - Lim, Khak Ho
AU - Xia, Yuxuan
AU - Xu, Lixiang
AU - Zhao, Mingjun
AU - Li, Mingquan
AU - Cheng, Ye
AU - Mao, Jiale
AU - Wang, Shuang
AU - Chen, Lei
AU - Tsang, Sai Wing
AU - Liu, Pingwei
AU - Wang, Qingyue
AU - Yang, Xuan
AU - Wang, Wen-Jun
AU - Cabot, Andreu
AU - Hong, Min
AU - Zhang, Yu
AU - Liu, Yu
PY - 2025/5/1
Y1 - 2025/5/1
N2 - Ag2Se has emerged as a promising thermoelectric (TE) material for room-temperature applications. However, its TE performance is limited by the low carrier effective mass (m*) of only 0.1 m0, where m0 represents the free electron mass. In this study, we employ a microwave-assisted method to synthesize nanostructured Ag2-xSe with Pb doping that is found to increase m* to 0.4 m0. Accordingly, the Seebeck coefficient is significantly enhanced, which together with the high electrical conductivity, leads to enhanced electronic transport. The increase in m* is systematically investigated by density functional theory calculations and linked to the enhanced electronic by modeling simulations. The calculated band structures reveal that the hybridization of heavy Pb-6p orbitals flattens the conduction band edges, and thereby enhances m*. Furthermore, Pb doping significantly reduces the lattice thermal conductivity due to the high-density point defects, dislocations, and grain boundaries, as revealed by detailed electron microscopy characterizations. The synergy from both enhanced electronic transport and reduced phonon propagation yielded a maximum figure of merit of 1.04 at 376 K, and an average figure of merit of 1.0 for Pb-doped Ag1.9Se. The optimized TE performance is further validated in a flexible TE generator, which produced a maximum output power of 0.6 μW at a temperature difference of 45 K. These findings demonstrate that enhancing m* and increasing phonon-scattering using vacancy tuning and aliovalent doping effectively boosts the TE performance of Ag2Se, a strategy that can be extended to other TE materials to maximize their potentials for power generation and thermoelectric cooling applications. © 2025 Elsevier B.V.
AB - Ag2Se has emerged as a promising thermoelectric (TE) material for room-temperature applications. However, its TE performance is limited by the low carrier effective mass (m*) of only 0.1 m0, where m0 represents the free electron mass. In this study, we employ a microwave-assisted method to synthesize nanostructured Ag2-xSe with Pb doping that is found to increase m* to 0.4 m0. Accordingly, the Seebeck coefficient is significantly enhanced, which together with the high electrical conductivity, leads to enhanced electronic transport. The increase in m* is systematically investigated by density functional theory calculations and linked to the enhanced electronic by modeling simulations. The calculated band structures reveal that the hybridization of heavy Pb-6p orbitals flattens the conduction band edges, and thereby enhances m*. Furthermore, Pb doping significantly reduces the lattice thermal conductivity due to the high-density point defects, dislocations, and grain boundaries, as revealed by detailed electron microscopy characterizations. The synergy from both enhanced electronic transport and reduced phonon propagation yielded a maximum figure of merit of 1.04 at 376 K, and an average figure of merit of 1.0 for Pb-doped Ag1.9Se. The optimized TE performance is further validated in a flexible TE generator, which produced a maximum output power of 0.6 μW at a temperature difference of 45 K. These findings demonstrate that enhancing m* and increasing phonon-scattering using vacancy tuning and aliovalent doping effectively boosts the TE performance of Ag2Se, a strategy that can be extended to other TE materials to maximize their potentials for power generation and thermoelectric cooling applications. © 2025 Elsevier B.V.
KW - Ag2-xSe
KW - Aliovalent doping
KW - Carrier effective mass
KW - Flexible thermoelectrics
KW - Microwave-assisted synthesis
UR - https://www.scopus.com/pages/publications/105001674953
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-105001674953&origin=recordpage
U2 - 10.1016/j.cej.2025.162265
DO - 10.1016/j.cej.2025.162265
M3 - RGC 21 - Publication in refereed journal
SN - 1385-8947
VL - 511
JO - Chemical Engineering Journal
JF - Chemical Engineering Journal
M1 - 162265
ER -