Thermoelastic dissipation in etch-hole filled Lamé bulk-mode silicon microresonators
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 6144691 |
| Pages (from-to) | 450-452 |
| Journal / Publication | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 3 |
| Publication status | Published - Mar 2012 |
Link(s)
Abstract
The perforation of a Lamé bulk-mode silicon mechanical resonator via uniformly distributed etch holes has been observed to drastically reduce the quality factor (Q) by over 90%. The cause of this sharp drop remains largely unknown. A high Q is important, while etch holes are commonly used in the fabrication of resonators. This letter traces the cause to thermoelastic dissipation through the use of finite-element analysis based on coupled thermoelastic equations. The results from the analysis are well corroborated by data from measurements of fabricated silicon-on-insulator devices. © 2012 IEEE.
Research Area(s)
- Bulk acoustic wave devices, etch holes, micromechanical resonator, quality factor
Citation Format(s)
Thermoelastic dissipation in etch-hole filled Lamé bulk-mode silicon microresonators. / Tu, Cheng; Lee, Joshua E.-Y.
In: IEEE Electron Device Letters, Vol. 33, No. 3, 6144691, 03.2012, p. 450-452.
In: IEEE Electron Device Letters, Vol. 33, No. 3, 6144691, 03.2012, p. 450-452.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
