Thermal stability of sectorial split-drain magnetic field-effect transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Wing-Shan Tam
  • Chi-Wah Kok
  • Sik-Lam Siu
  • Wing-Man Tang
  • Chi-Wah Leung

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)1115-1118
Journal / PublicationMicroelectronics Reliability
Volume54
Issue number6-7
Publication statusPublished - Jun 2014

Abstract

The effect of charge trapping on the performance of sectorial Split-Drain Magnetic Field Effect Transistor (SD-MAGFET) under the influence of magnetic field is examined based on conventional capacitance measurement techniques upon different magnetic field strength and thermal conditions. The experimental results confirmed the charge trapping effect in sectorial SD-MAGFET is magnetic field and temperature dependent, where the charge trapping sites are localized at the channel boundary, which verifies the conjecture of trap-assisted magnetic sensitivity hysteresis and deterioration of the device found in recent literatures. The results of the study are useful to sectorial SD-MAGFET in high performance magnetic sensing applications. © 2013 Elsevier Ltd. All rights reserved.

Citation Format(s)

Thermal stability of sectorial split-drain magnetic field-effect transistors. / Tam, Wing-Shan; Kok, Chi-Wah; Siu, Sik-Lam; Tang, Wing-Man; Leung, Chi-Wah; Wong, Hei.

In: Microelectronics Reliability, Vol. 54, No. 6-7, 06.2014, p. 1115-1118.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review