Thermal stability of nickel silicides in different silicon substrates

Stephen C.H. Ho; M. C. Poon; Mansun Chan; H. Wong

doi:10.1109/HKEDM.1998.740198

Thermal stability of nickel silicides in different silicon substrates

Stephen C.H. Ho
, M. C. Poon
, Mansun Chan
, H. Wong

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

5 Citations (Scopus)

Abstract

Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700°C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400°C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000°C FGA and on 1000 Å gate oxide.

Original language	English
Title of host publication	Proceedings 1998 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	105-108
ISBN (Print)	0-7803-4932-6
DOIs	https://doi.org/10.1109/HKEDM.1998.740198
Publication status	Published - Aug 1998
Event	5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 - Hong Kong, Hong Kong, China Duration: 29 Aug 1998 → 29 Aug 1998

Publication series

Name	Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume	1998-August

Conference

Conference	5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Place	Hong Kong, China
City	Hong Kong
Period	29/08/98 → 29/08/98

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access Output

10.1109/HKEDM.1998.740198

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@inproceedings{5c5f6fd076b6497b80ed847ec321169f,

title = "Thermal stability of nickel silicides in different silicon substrates",

abstract = "Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700°C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400°C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000°C FGA and on 1000 {\AA} gate oxide.",

author = "Ho, \{Stephen C.H.\} and Poon, \{M. C.\} and Mansun Chan and H. Wong",

year = "1998",

month = aug,

doi = "10.1109/HKEDM.1998.740198",

language = "English",

isbn = "0-7803-4932-6",

series = "Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998",

publisher = "IEEE",

pages = "105--108",

booktitle = "Proceedings 1998 IEEE Hong Kong Electron Devices Meeting",

address = "United States",

note = "5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 ; Conference date: 29-08-1998 Through 29-08-1998",

}

Ho, SCH, Poon, MC, Chan, M & Wong, H 1998, Thermal stability of nickel silicides in different silicon substrates. in Proceedings 1998 IEEE Hong Kong Electron Devices Meeting., 740198, Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, vol. 1998-August, IEEE, pp. 105-108, 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, Hong Kong, Hong Kong, China, 29/08/98. https://doi.org/10.1109/HKEDM.1998.740198

Thermal stability of nickel silicides in different silicon substrates. / Ho, Stephen C.H.; Poon, M. C.; Chan, Mansun et al.
Proceedings 1998 IEEE Hong Kong Electron Devices Meeting. IEEE, 1998. p. 105-108 740198 (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998; Vol. 1998-August).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Thermal stability of nickel silicides in different silicon substrates

AU - Ho, Stephen C.H.

AU - Poon, M. C.

AU - Chan, Mansun

AU - Wong, H.

PY - 1998/8

Y1 - 1998/8

N2 - Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700°C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400°C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000°C FGA and on 1000 Å gate oxide.

AB - Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700°C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400°C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000°C FGA and on 1000 Å gate oxide.

UR - https://www.scopus.com/pages/publications/31544466949

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-31544466949&origin=recordpage

U2 - 10.1109/HKEDM.1998.740198

DO - 10.1109/HKEDM.1998.740198

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-4932-6

T3 - Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

SP - 105

EP - 108

BT - Proceedings 1998 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998

Y2 - 29 August 1998 through 29 August 1998

ER -

Thermal stability of nickel silicides in different silicon substrates

Abstract

Publication series

Conference

UN SDGs

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this