Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

M. C. Poon; F. Deng; H. Wong; M. Wong; J. K O Sin; S. S. Lau; C. H. Ho; P. G. Han

doi:10.1109/HKEDM.1997.642333

Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

M. C. Poon
, F. Deng
, H. Wong
, M. Wong
, J. K O Sin
, S. S. Lau
, C. H. Ho
, P. G. Han

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

CoSi₂ is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi₂ are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi₂ is a better silicide material for amorphous Si device applications.

Original language	English
Title of host publication	Proceedings - 1997 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	65-68
ISBN (Print)	0-7803-3802-2
DOIs	https://doi.org/10.1109/HKEDM.1997.642333
Publication status	Published - Aug 1997
Event	1997 IEEE Hong Kong Electron Devices Meeting - City University of Hong Kong, Hong Kong, China Duration: 30 Aug 1997 → 30 Aug 1997

Conference

Conference	1997 IEEE Hong Kong Electron Devices Meeting
Abbreviated title	HKEDM'97
Place	Hong Kong, China
Period	30/08/97 → 30/08/97

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SDG 7 Affordable and Clean Energy

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@inproceedings{7e44ef3bb1d74173909dc80829d684b2,

title = "Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon",

abstract = "CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.",

author = "Poon, \{M. C.\} and F. Deng and H. Wong and M. Wong and Sin, \{J. K O\} and Lau, \{S. S.\} and Ho, \{C. H.\} and Han, \{P. G.\}",

year = "1997",

month = aug,

doi = "10.1109/HKEDM.1997.642333",

language = "English",

isbn = "0-7803-3802-2",

pages = "65--68",

booktitle = "Proceedings - 1997 IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "1997 IEEE Hong Kong Electron Devices Meeting, HKEDM'97 ; Conference date: 30-08-1997 Through 30-08-1997",

}

TY - GEN

T1 - Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

AU - Poon, M. C.

AU - Deng, F.

AU - Wong, H.

AU - Wong, M.

AU - Sin, J. K O

AU - Lau, S. S.

AU - Ho, C. H.

AU - Han, P. G.

PY - 1997/8

Y1 - 1997/8

N2 - CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.

AB - CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.

UR - https://www.scopus.com/pages/publications/0031365740

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0031365740&origin=recordpage

U2 - 10.1109/HKEDM.1997.642333

DO - 10.1109/HKEDM.1997.642333

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-3802-2

SP - 65

EP - 68

BT - Proceedings - 1997 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 1997 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 August 1997 through 30 August 1997

ER -

Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

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