TY - JOUR
T1 - Thermal stability of cobalt and nickel silicides
AU - Poon, M. C.
AU - Ho, C. H.
AU - Deng, F.
AU - Lau, S. S.
AU - Wong, H.
PY - 1998
Y1 - 1998
N2 - Thermal stability of cobalt and nickel silicides on crystalline Si (c-Si) and amorphous Si (a-Si) has been investigated. We have found that CoSi2 is thermally stable on a-Si and c-Si substrates up to 950°C for 30 min. NiSi is stable and shows low resistivity on c-Si at around 700°C for 30 min, but is unstable on a-Si substrate even after annealing at 400°C. © 1998 Elsevier Science Ltd. All rights reserved.
AB - Thermal stability of cobalt and nickel silicides on crystalline Si (c-Si) and amorphous Si (a-Si) has been investigated. We have found that CoSi2 is thermally stable on a-Si and c-Si substrates up to 950°C for 30 min. NiSi is stable and shows low resistivity on c-Si at around 700°C for 30 min, but is unstable on a-Si substrate even after annealing at 400°C. © 1998 Elsevier Science Ltd. All rights reserved.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032157147&origin=recordpage
U2 - 10.1016/S0026-2714(98)00045-6
DO - 10.1016/S0026-2714(98)00045-6
M3 - RGC 21 - Publication in refereed journal
SN - 0026-2714
VL - 38
SP - 1495
EP - 1498
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 9
ER -
