Thermal stability of amorphous GaN1-x Asx alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • A. X. Levander
  • Z. Liliental-Weber
  • R. Broesler
  • M. E. Hawkridge
  • S. V. Novikov
  • C. T. Foxon
  • O. D. Dubon
  • J. Wu
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Article number161902
Journal / PublicationApplied Physics Letters
Volume98
Issue number16
Publication statusPublished - 18 Apr 2011
Externally publishedYes

Abstract

GaN1-x Asx alloys grown across the composition range by low temperature molecular beam epitaxy have great technological potential for photovoltaic applications owing to their strong absorption coefficient and wide tunability of band gap and band edges. We found that amorphous GaN 1-x Asx alloys that are formed for the compositions x, in the range of x∼0.3-0.7 are stable up to 700 °C. This is surprising since growth of GaN1-x Asx above 400 °C results in phase segregation. At annealing temperatures higher than 700 °C the alloy phase segregates into GaAs:N and GaN:As. The relative size of the nanocrystals depends on the initial film composition and annealing conditions. © 2011 American Institute of Physics.

Citation Format(s)

Thermal stability of amorphous GaN1-x Asx alloys. / Levander, A. X.; Liliental-Weber, Z.; Broesler, R.; Hawkridge, M. E.; Novikov, S. V.; Foxon, C. T.; Dubon, O. D.; Wu, J.; Walukiewicz, W.; Yu, K. M.

In: Applied Physics Letters, Vol. 98, No. 16, 161902, 18.04.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review