Thermal stability improvement of ultrathin CoSi2 film formed by TiN capping layer and Co/Ti/Si ternary solid phase reaction

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jing Liu
  • Guoping Ru
  • Zhiguang Gu
  • Xinping Qu
  • Bingzong Li

Detail(s)

Original languageEnglish
Pages (from-to)214-217
Journal / PublicationPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume19
Issue number3
Publication statusPublished - 1998
Externally publishedYes

Abstract

The thermal stability of the ultra thin CoSi2 film has been studied. Four different thin film structures of Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si were used to form the thin CoSi2 film. Four point probe measurements and cross-sectional transmission electron microscopy (CTEM) were used to characterize the thermal and morphological stability of the CoSi2 films formed by these structures. Experimental results show that the CoSi2 film formed by direct reaction of Co/Si is sensitive to the thermal budget. The TiN capping layer and the Co/Ti/Si ternary solid phase reaction are found to be good to form the more homogeneous and stable ultra thin CoSi2 film. The CoSi2 film formed by TiN (30 nm)/Co(10 nm)/Ti(5 nm)/Si can be stable up to 1000 °C and has the potentiality to be used in the deep submicron ULSI technology.

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