Abstract
The thermal change of unstable stacking faults (USFs) in ultrafine and highly pure β-SiC powder synthesized by the plasma chemical vapor deposition (plasma-CVD) method was studied by high-resolution transmission electron microscopy (HR-TEM). The number of USFs, which were frequently observed in as-synthesized powder, decreased at elevated temperatures in an Ar atmosphere. In contrast, the number of general stacking faults (GSFs) increased with decreasing number of USFs. Moreover, a type of stacking fault that was geometrically more unstable than USF was observed in the specimen after heat treatment. In the present study, the annihilation process of USFs observed in the specimen before heat treatment is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 3969-3974 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 6 A |
| DOIs | |
| Publication status | Published - Jun 2001 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- General stacking fault
- Heat treatment
- High-resolution transmission electron microscopy
- Plasma-CVD
- Unstable stacking fault
- β-SiC
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