Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • B. S. Lim
  • W. C. Pritchet
  • K. P. Rodbell
  • K. N. Tu

Detail(s)

Original languageEnglish
Pages (from-to)2945-2947
Journal / PublicationJournal of Applied Physics
Volume74
Issue number4
Publication statusPublished - 1993
Externally publishedYes

Abstract

The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.

Bibliographic Note

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Citation Format(s)

Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers. / Lim, B. S.; Pritchet, W. C.; Rodbell, K. P. et al.
In: Journal of Applied Physics, Vol. 74, No. 4, 1993, p. 2945-2947.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review