Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

B. S. Lim; W. C. Pritchet; K. P. Rodbell; K. N. Tu

doi:10.1063/1.354623

Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

B. S. Lim
, W. C. Pritchet
, K. P. Rodbell
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.

Original language	English
Pages (from-to)	2945-2947
Journal	Journal of Applied Physics
Volume	74
Issue number	4
DOIs	https://doi.org/10.1063/1.354623
Publication status	Published - 1993
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Thermal behavior of Al and Al-3 at. \% Ge thin films on Si wafers",

abstract = "The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. \% Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.",

author = "Lim, \{B. S.\} and Pritchet, \{W. C.\} and Rodbell, \{K. P.\} and Tu, \{K. N.\}",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

AU - Lim, B. S.

AU - Pritchet, W. C.

AU - Rodbell, K. P.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1993

Y1 - 1993

N2 - The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.

AB - The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.

UR - https://www.scopus.com/pages/publications/3342921930

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-3342921930&origin=recordpage

U2 - 10.1063/1.354623

DO - 10.1063/1.354623

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 74

SP - 2945

EP - 2947

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

Abstract

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