Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

5 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1863-1867
Journal / PublicationMicroelectronics Reliability
Volume53
Issue number12
Publication statusPublished - Dec 2013
Externally publishedYes

Abstract

Hafnium oxide (HfO2) films are not stable at a high-temperature thermal treatment and under high-field stressing. The thermally-induced instabilities might involve the formation of nanocrystalline phases, interface reactions, and out-diffusion of substrate silicon. Our results indicate that there exists an optimal thermal treatment temperature which compromises these effects and yields the best electrical properties of the HfO2 films. This observation has a high practical value in deciding the processing temperatures for MOS device fabrication using a high-k material as the gate dielectric film. © 2013 Elsevier Ltd. All rights reserved.