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Theory of sigma bond resonance in flat boron materials

  • Lu Qiu (Co-first Author)
  • , Xiuyun Zhang (Co-first Author)
  • , Xiao Kong
  • , Izaac Mitchell
  • , Tianying Yan
  • , Sung Youb Kim
  • , Boris I. Yakobson*
  • , Feng Ding*
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

17 Downloads (CityUHK Scholars)

Abstract

In chemistry, theory of aromaticity or π bond resonance plays a central role in intuitively understanding the stability and properties of organic molecules. Here we present an analogue theory for σ bond resonance in flat boron materials, which allows us to determine the distribution of two-center two-electron and three-center two-electron bonds without quantum calculations. Based on this theory, three rules are proposed to draw the Kekulé-like bonding configurations for flat boron materials and to explore their properties intuitively. As an application of the theory, a simple explanation of why neutral borophene with ~1/9 hole has the highest stability and the effect of charge doping on borophene’s optimal hole concentration is provided with the assumption of σ and π orbital occupation balance. Like the aromaticity theory for carbon materials, this theory greatly deepens our understanding on boron materials and paves the way for the rational design of various boron-based materials. © 2023, The Author(s).
Original languageEnglish
Article number1804
JournalNature Communications
Volume14
Online published31 Mar 2023
DOIs
Publication statusPublished - 2023
Externally publishedYes

Publisher's Copyright Statement

  • This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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