Abstract
Piezotronic and piezo-phototronic devices exhibit high performance and have potential applications especially in next-generation self-powered, flexible electronics and wearable systems. In these devices, a strain-induced piezoelectric field at a junction, contact, or interface can significantly modulate the carrier generation, recombination, and transport properties. This mechanism has been studied based on the theory of piezotronics and piezo-phototronics. Simulation-driven materials design and device improvements have been greatly propelled by the finite element method, density functional theory, and molecular dynamics for achieving high-performance devices. Dynamical piezoelectric fields can also control new quantum states in quantum materials, such as in topological insulators, which pave a new path for enhancing performance and for investigating the fundamental physics of quantum piezotronics and piezo-phototronics. © Materials Research Society 2018.
| Original language | English |
|---|---|
| Pages (from-to) | 928-935 |
| Journal | MRS Bulletin |
| Volume | 43 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1 Dec 2018 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- piezoelectric
- semiconducting
- sensor