Abstract
The dependence of the structural, electronic, and optical properties on the passivating shell of 110 and 112 silicon nanowires is investigated by a combination of theoretical methods. We show that the band structure around the Fermi level is strongly influenced by the direction of the nanowire as well as by the chemical properties of the passivating shell. This indicates that the wavelength of eventual light-emitting devices could be tuned by the choice of the surface coverage. © 2007 The American Physical Society.
| Original language | English |
|---|---|
| Article number | 35305 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 76 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 6 Jul 2007 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Aradi, B., Ramos, L. E., Deák, P., Köhler, T., Bechstedt, F., Zhang, R. Q., & Frauenheim, T. (2007). Theoretical study of the chemical gap tuning in silicon nanowires. Physical Review B - Condensed Matter and Materials Physics, 76(3), [35305]. https://doi.org/10.1103/PhysRevB.76.035305. The copyright of this article is owned by American Physical Society.
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