Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

K. L. Yip; H. Wong; Y. C. Cheng

doi:10.1016/0038-1101(93)90041-N

Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

K. L. Yip, H. Wong, Y. C. Cheng

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Original language	English
Pages (from-to)	1645-1649
Journal	Solid State Electronics
Volume	36
Issue number	11
DOIs	https://doi.org/10.1016/0038-1101(93)90041-N
Publication status	Published - Nov 1993

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@article{f1391b456e574ff0975b6f3f078a5334,

title = "Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET",

author = "Yip, {K. L.} and H. Wong and Cheng, {Y. C.}",

year = "1993",

month = nov,

doi = "10.1016/0038-1101(93)90041-N",

language = "English",

volume = "36",

pages = "1645--1649",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "11",

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TY - JOUR

T1 - Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

AU - Yip, K. L.

AU - Wong, H.

AU - Cheng, Y. C.

PY - 1993/11

Y1 - 1993/11

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-30044447001&origin=recordpage

U2 - 10.1016/0038-1101(93)90041-N

DO - 10.1016/0038-1101(93)90041-N

M3 - RGC 21 - Publication in refereed journal

SN - 0038-1101

VL - 36

SP - 1645

EP - 1649

JO - Solid State Electronics

JF - Solid State Electronics

IS - 11

ER -

Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

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