The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

6 Scopus Citations
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Author(s)

  • D.Q. Yu
  • W.S. Lau
  • Xuan Feng
  • Shurong Dong
  • K.L. Pey

Detail(s)

Original languageEnglish
Pages (from-to)95-98
Journal / PublicationMicroelectronics Reliability
Volume61
Online published28 Feb 2016
Publication statusPublished - Jun 2016
Externally publishedYes

Abstract

In this paper, we will report that the leakage current characteristics can be a function of the bottom electrode. The variation of the bottom tungsten electrode thickness can affect the leakage current characteristics of W/Ta2O5/W MIM capacitors mainly through two mechanisms. The first mechanism is that the Ta2O5 CVD process can be influenced by the W bottom electrode thickness. Experimentally it was observed that the thickness of the Ta2O5 film deposited by CVD is noticeably different for samples with different bottom W electrodes with different thicknesses. The second mechanism is that the surface roughness of the bottom W electrode increases with increasing thickness, resulting in a smaller effective Schottky barrier height. A smaller effective Schottky barrier height will lead to larger leakage current.

Research Area(s)

  • Effective Schottky barrier height, Surface roughness, Surface smoothing, Ta2O5

Citation Format(s)