The uniformity improvement of GaN etching by simulation and experiment

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019)
Subtitle of host publicationProgram Book
Pages186-188
Publication statusPublished - Dec 2019

Conference

Title15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019)
LocationSheraton Shenzhen Nanshan
PlaceChina
CityShenzhen
Period19 - 22 December 2019

Research Area(s)

  • GaN etching, ICP, non-uniformity, plasma simulation

Citation Format(s)

The uniformity improvement of GaN etching by simulation and experiment. / XIAO, Dezhi; Chu, Paul K.

15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019): Program Book. 2019. p. 186-188.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review