The uniformity improvement of GaN etching by simulation and experiment
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | 15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019) |
| Subtitle of host publication | Program Book |
| Pages | 186-188 |
| Publication status | Published - Dec 2019 |
Conference
| Title | 15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019) |
|---|---|
| Location | Sheraton Shenzhen Nanshan |
| Place | China |
| City | Shenzhen |
| Period | 19 - 22 December 2019 |
Link(s)
| Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(e9127dbf-4660-4d98-ba5e-0474f80186ab).html |
|---|
Research Area(s)
- GaN etching, ICP, non-uniformity, plasma simulation
Citation Format(s)
The uniformity improvement of GaN etching by simulation and experiment. / XIAO, Dezhi; Chu, Paul K.
15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019): Program Book. 2019. p. 186-188.
15th International Conference on Plasma Based Ion Implantation & Deposition (PBII&D 2019): Program Book. 2019. p. 186-188.
Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review
