The strengthening mechanism of DLC film on silicon by MPECVD

S. L. Sung; X. J. Guo; K. P. Huang; F. R. Chen; H. C. Shih

doi:10.1016/s0040-6090(97)00782-7

The strengthening mechanism of DLC film on silicon by MPECVD

S. L. Sung, X. J. Guo, K. P. Huang, F. R. Chen, H. C. Shih

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

15 Citations (Scopus)

Abstract

Diamond-like carbon (DLC) coatings were successfully produced on the silicon wafer by a microwave plasma enhanced chemical vapor deposition (MPECVD) with the precursor gases of methane, hydrogen and argon. High resolution transmission electron microscopy (HRTEM) was applied to analyze the nano-particles in the coating. Both diamond and silicon carbide (SiC) nano-clusters of sizes ranging from 2 to 5 nm were observed in the DLC films. The dispersion of nano-clusters of diamond and SiC improves the film quality in terms of crystallinity and hardness of the DLC coating significantly.

Original language	English
Pages (from-to)	345-350
Journal	Thin Solid Films
Volume	315
Issue number	1-2
DOIs	https://doi.org/10.1016/s0040-6090(97)00782-7
Publication status	Published - 2 Mar 1998
Externally published	Yes

Research Keywords

Diamond-like carbon
Microwave plasma enhanced chemical vapor deposition
Silicon

Access Output

10.1016/s0040-6090(97)00782-7

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{46b8b4e34e6e4e81a336f8b33e3a11c1,

title = "The strengthening mechanism of DLC film on silicon by MPECVD",

abstract = "Diamond-like carbon (DLC) coatings were successfully produced on the silicon wafer by a microwave plasma enhanced chemical vapor deposition (MPECVD) with the precursor gases of methane, hydrogen and argon. High resolution transmission electron microscopy (HRTEM) was applied to analyze the nano-particles in the coating. Both diamond and silicon carbide (SiC) nano-clusters of sizes ranging from 2 to 5 nm were observed in the DLC films. The dispersion of nano-clusters of diamond and SiC improves the film quality in terms of crystallinity and hardness of the DLC coating significantly. ",

keywords = "Diamond-like carbon, Microwave plasma enhanced chemical vapor deposition, Silicon",

author = "Sung, {S. L.} and Guo, {X. J.} and Huang, {K. P.} and Chen, {F. R.} and Shih, {H. C.}",

year = "1998",

month = mar,

day = "2",

doi = "10.1016/s0040-6090(97)00782-7",

language = "English",

volume = "315",

pages = "345--350",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - The strengthening mechanism of DLC film on silicon by MPECVD

AU - Sung, S. L.

AU - Guo, X. J.

AU - Huang, K. P.

AU - Chen, F. R.

AU - Shih, H. C.

PY - 1998/3/2

Y1 - 1998/3/2

N2 - Diamond-like carbon (DLC) coatings were successfully produced on the silicon wafer by a microwave plasma enhanced chemical vapor deposition (MPECVD) with the precursor gases of methane, hydrogen and argon. High resolution transmission electron microscopy (HRTEM) was applied to analyze the nano-particles in the coating. Both diamond and silicon carbide (SiC) nano-clusters of sizes ranging from 2 to 5 nm were observed in the DLC films. The dispersion of nano-clusters of diamond and SiC improves the film quality in terms of crystallinity and hardness of the DLC coating significantly.

AB - Diamond-like carbon (DLC) coatings were successfully produced on the silicon wafer by a microwave plasma enhanced chemical vapor deposition (MPECVD) with the precursor gases of methane, hydrogen and argon. High resolution transmission electron microscopy (HRTEM) was applied to analyze the nano-particles in the coating. Both diamond and silicon carbide (SiC) nano-clusters of sizes ranging from 2 to 5 nm were observed in the DLC films. The dispersion of nano-clusters of diamond and SiC improves the film quality in terms of crystallinity and hardness of the DLC coating significantly.

KW - Diamond-like carbon

KW - Microwave plasma enhanced chemical vapor deposition

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0032473185&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032473185&origin=recordpage

U2 - 10.1016/s0040-6090(97)00782-7

DO - 10.1016/s0040-6090(97)00782-7

M3 - RGC 21 - Publication in refereed journal

SN - 0040-6090

VL - 315

SP - 345

EP - 350

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

The strengthening mechanism of DLC film on silicon by MPECVD

Abstract

Research Keywords

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this