The selective etching with H+ ions and its effect on the oriented growth of diamond films

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Original languageEnglish
Pages (from-to)1896-1899
Journal / PublicationJournal of Applied Physics
Volume82
Issue number4
Publication statusPublished - 15 Aug 1997
Externally publishedYes

Abstract

A novel etching effect of hydrogen ions on the growth of diamond films was observed. The H+ ion bombardment was performed by applying a negative substrate bias during a microwave plasma chemical vapor deposition process, using only hydrogen as a reactant gas. The effect of this bombardment was investigated by means of scanning electron microscopy. It was found that the etching efficiency of H+ ions on non-[001]-oriented grains is more significant than that on grains with their (001) faces parallel to the substrate. A lateral growth of the (001) faces can occur during the bombardment process. As a result, the size of (001) faces increases after H+ etching while grains with other directions are etched off. This effect provides a way to improve the orientation degree of [001] oriented diamond films and might be helpful for obtaining [001] oriented diamond films with small thickness. © 1997 American Institute of Physics.

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