The role of surface tension in the growth of strained quantum wire arraysa)

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)717-721
Journal / PublicationJournal of Applied Physics
Volume69
Issue number2
Publication statusPublished - 15 Jan 1991
Externally publishedYes

Abstract

The critical radius of a strained quantum wire and the potential strain stabilization of quantum wire arrays has been investigated for the InxGa1-xAs/GaAs system. The critical radius of the quantum wire was calculated using an energy balance approach. The wire was found to be more stable than the corresponding two-dimensional quantum well structure. The use of surface tension as a stabilization force during the growth of strained quantum wire arrays is expected to have beneficial effects for arrays with greater than 7% InAs.

Citation Format(s)

The role of surface tension in the growth of strained quantum wire arraysa). / Sherwin, M. E.; Drummond, T. J.; Srolovitz, D. J.
In: Journal of Applied Physics, Vol. 69, No. 2, 15.01.1991, p. 717-721.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review