The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species

W. J. Zhang; C. Y. Chan; X. M. Meng; M. K. Fung; I. Bello; Y. Lifshitz; S. T. Lee; X. Jiang

doi:10.1002/anie.200500320

The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species

W. J. Zhang
, C. Y. Chan
, X. M. Meng
, M. K. Fung
, I. Bello
, Y. Lifshitz
, S. T. Lee
, X. Jiang

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

55 Citations (Scopus)

Abstract

(Chemical Equation Presented) Growing pains: A new surface reaction mechanism for the growth of films of cubic BN (cBN) in an electron cyclotron resonance plasma fed with a reactive gas mixture (BF₃/H ₂/N₂) is revealed. The excited plasma contains reactive H, F, BF_x, and NH_x species which are responsible for the etching of hexagonal BN (mainly through F atoms) and for the growth of the cBN crystals (through BF_x and NH_x species; see picture). © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	4749-4753
Journal	Angewandte Chemie - International Edition
Volume	44
Issue number	30
DOIs	https://doi.org/10.1002/anie.200500320
Publication status	Published - 25 Jul 2005

Research Keywords

Chemical vapor deposition
Crystal growth
Nitrides
Plasma chemistry
Reaction mechanisms

Access Output

10.1002/anie.200500320

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{c7a18d76ac5f40b6a298750f3eb9a25d,

title = "The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species",

abstract = "(Chemical Equation Presented) Growing pains: A new surface reaction mechanism for the growth of films of cubic BN (cBN) in an electron cyclotron resonance plasma fed with a reactive gas mixture (BF3/H 2/N2) is revealed. The excited plasma contains reactive H, F, BFx, and NHx species which are responsible for the etching of hexagonal BN (mainly through F atoms) and for the growth of the cBN crystals (through BFx and NHx species; see picture). {\textcopyright} 2005 Wiley-VCH Verlag GmbH \& Co. KGaA.",

keywords = "Chemical vapor deposition, Crystal growth, Nitrides, Plasma chemistry, Reaction mechanisms",

author = "Zhang, \{W. J.\} and Chan, \{C. Y.\} and Meng, \{X. M.\} and Fung, \{M. K.\} and I. Bello and Y. Lifshitz and Lee, \{S. T.\} and X. Jiang",

year = "2005",

month = jul,

day = "25",

doi = "10.1002/anie.200500320",

language = "English",

volume = "44",

pages = "4749--4753",

journal = "Angewandte Chemie - International Edition",

issn = "1433-7851",

publisher = "John Wiley \& Sons",

number = "30",

}

TY - JOUR

T1 - The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species

AU - Zhang, W. J.

AU - Chan, C. Y.

AU - Meng, X. M.

AU - Fung, M. K.

AU - Bello, I.

AU - Lifshitz, Y.

AU - Lee, S. T.

AU - Jiang, X.

PY - 2005/7/25

Y1 - 2005/7/25

N2 - (Chemical Equation Presented) Growing pains: A new surface reaction mechanism for the growth of films of cubic BN (cBN) in an electron cyclotron resonance plasma fed with a reactive gas mixture (BF3/H 2/N2) is revealed. The excited plasma contains reactive H, F, BFx, and NHx species which are responsible for the etching of hexagonal BN (mainly through F atoms) and for the growth of the cBN crystals (through BFx and NHx species; see picture). © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - (Chemical Equation Presented) Growing pains: A new surface reaction mechanism for the growth of films of cubic BN (cBN) in an electron cyclotron resonance plasma fed with a reactive gas mixture (BF3/H 2/N2) is revealed. The excited plasma contains reactive H, F, BFx, and NHx species which are responsible for the etching of hexagonal BN (mainly through F atoms) and for the growth of the cBN crystals (through BFx and NHx species; see picture). © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.

KW - Chemical vapor deposition

KW - Crystal growth

KW - Nitrides

KW - Plasma chemistry

KW - Reaction mechanisms

UR - https://www.scopus.com/pages/publications/23044486217

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-23044486217&origin=recordpage

U2 - 10.1002/anie.200500320

DO - 10.1002/anie.200500320

M3 - RGC 21 - Publication in refereed journal

SN - 1433-7851

VL - 44

SP - 4749

EP - 4753

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 30

ER -

The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species

Abstract

Research Keywords

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this